The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
MOSFETs contain a fast-recovery body diode to bring the performance advantages of the Company’s latest super-junction technology to full- and half-bridge topologies, Zero-Voltage Switching (ZVS) phase-shift converters, and applications and topologies generally that need a robust diode to handle dynamic dV/dt.
10N60 Ultra Fast Recovery MOSFET
- RDS(ON) < 0.75Ω@VGS =10V
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability